Proceedings Vol. 16 (2010)
ENGINEERING MECHANICS 2010
May 10 – 13, 2010, Svratka, Czech Republic
Copyright © 2010 Institute of Thermomechanics, Academy of Sciences of the Czech Republic, v.v.i., Prague
ISSN 1805-8248 (printed)
ISSN 1805-8256 (electronic)
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pages 87 - +8p., full text
In this paper, a new method of measurement of mechanical properties of thin films is presented. This method combines specimen preparation by focused ion beam (FIB) and compression test using nanoindentation device. Compression specimens were prepared from thin film, Al-1.5%Cu, which is commonly used in integrated circuit. Cylindrical specimens were prepared by FIB milling. The height of specimens (pillars) was about 2 μm (equal to the film thickness) and their diameter was about 1.3 μm. The pillars are single crystalline, therefore the results depend on crystallographic orientation of pillar, which was specified by EBSD (electron backscatter diffraction). Stress-strain curves of the thin film were obtained in two representations, σ−ε and τ−γ.
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All papers were reviewed by members of the scientific committee.